Semiconductor optical amplifiers at 2.0-μm wavelength heterogeneously integrated on silicon
نویسندگان
چکیده
We report the first semiconductor optical amplifiers at 2.0-μm wavelength, heterogeneously integrated by bonding an InP-based active region to silicon. On-chip gain larger than 10 dB is observed at 20°C over a 40-nm bandwidth. OCIS codes: (130.3120) Integrated optics devices, (230.4480) Optical amplifiers.
منابع مشابه
Semiconductor optical amplifiers at 2.0-μm wavelength on silicon
P A P ER Abstract A semiconductor optical amplifier at 2.0-μm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP-based active region to a silicon substrate. It is therefore compatible with low-cost and highvolume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On-chip gain...
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